Optical Properties of Nonstoichiometric Silicon Oxide SiOx (x < 2)
| Autor: | S. V. Rykhlitskii, Gennadiy N. Kamaev, Vladimir A. Gritsenko, Vladimir N. Kruchinin, Timofey V. Perevalov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Band gap Analytical chemistry Chemical vapor deposition 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid 010309 optics Ab initio quantum chemistry methods Ellipsometry 0103 physical sciences Silicon oxide Refractive index Stoichiometry |
| Zdroj: | Optics and Spectroscopy. 127:836-840 |
| ISSN: | 1562-6911 0030-400X |
| Popis: | The optical properties of amorphous nonstoichiometric silicon oxide (SiOx) films of variable composition (x = 0.62–1.92) formed by plasma-enhanced chemical vapor deposition are studied in the spectral range of 1.12–4.96 eV. Spectral ellipsometry showed that the refractive index dispersion character allows one to assign the formed SiOx films to silicon-like films, dielectrics, or intermediate-conductivity-type films depending on the content of oxygen in the gas phase during synthesis. A model of the SiOx structure for ab initio calculations is proposed and describes well the experimental optical spectra. Ab initio calculations of the dependences of the SiOx refractive index and band gap on stoichiometry parameter x are performed. |
| Databáze: | OpenAIRE |
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