Influence of Layout and Packaging on the Temperature of GaAs Power PHEMTs
| Autor: | H. Kawashima, M. Dammann, B. Matthes, Michael Schlechtweg, Axel Hulsmann, W. Marsetz, J. Rudiger |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Thermal resistance Transistor Schottky diode Hardware_PERFORMANCEANDRELIABILITY Temperature measurement law.invention Power (physics) Gallium arsenide chemistry.chemical_compound Thermal conductivity chemistry law ComputerSystemsOrganization_MISCELLANEOUS Hardware_INTEGRATEDCIRCUITS Optoelectronics Junction temperature business |
| Zdroj: | 28th European Microwave Conference, 1998. |
| DOI: | 10.1109/euma.1998.338193 |
| Popis: | The influence of device layout and packaging on transistor temperature was investigated. The operating temperatures of GaAs power PHEMTs were measured with integrated temperature sensors from 20 - 200°C with an accuracy of a few degrees. The measured data are in very good agreement with our three-dimensional simulation results. Thus, reliable prediction on the effect of packaging and layout details on device temperature is possible. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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