| Autor: |
Sebastian Lourdudoss, E. Rodriguez Messmer, Olle Kjebon, Gunnar Landgren |
| Rok vydání: |
1995 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 152:105-114 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(95)00116-6 |
| Popis: |
Temporally resolved regrowth of InP around reactive ion etched striped mesas without mask is reported. The regrowth was carried out at the growth temperatures of 600, 650, 685 and 700°C in a near equilibrium process, Hydride vapour phase epitaxy (HVPE). The mesa orientations considered were [110] and [110]. The regrowth profiles, initial lateral growth and evolution of certain crystallographic planes are analysed. The regrowth profiles and initial lateral growth rates are dependent on temperature and mesa orientation. The differences are explained by invoking the bonding configurations existing on the mesa walls under the epitaxial growth conditions of excess phosphorus pressure. The facility of lateral growth especially in the [110] mesa case is explained by a more favourable net reduction of dangling bonds. The emerging crystallographic planes are identified as hhl. Initially the planes with lh ≤ 3 are formed but progress towards lh ≥ 3. The implication of a very high lateral growth rate in utilising regrowth for device fabrication is also mentioned. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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Full Text from ScienceDirect