Composition and charge properties of Al/Ti–SiO2–InP (100) structures
| Autor: | N.V Babushkina, S.A Malyshev |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Range (particle radiation)
Materials science Analytical chemistry Charge (physics) Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Hysteresis Absorption band Materials Chemistry Composition (visual arts) Electrical and Electronic Engineering Silicon oxide Pyrolysis |
| Zdroj: | Solid-State Electronics. 42:217-220 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(97)00236-0 |
| Popis: | High-quality silicon oxide films (dox=700–2000 A) have been deposited on n-type InP (100) substrates by chemical vapor deposition using pyrolysis of tetraethoxysilane (TEOS) in an O2/N2 flow at 300–350°C. The deposition rate was 2000–2500 A/h. SEM has shown that the films are homogenous and uniform. IR-spectroscopy has shown that for dox>1000 A the main absorption band lies in the range of 1060–1067 cm−1 (Δν=74–80 cm−1), and for dox 1000 A, and one with ionic-type hysteresis (0.7–1.0 V) for dox |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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