An investigation of a metastable form of GaS by convergent-beam electron diffraction and high-resolution electron microscopy

Autor: P. Goodman, H.J. Whitfield, A. Olsen
Rok vydání: 1985
Předmět:
Zdroj: Acta Crystallographica Section B Structural Science. 41:292-298
ISSN: 0108-7681
Popis: GaS prepared at temperatures below that required for adequate annealing is found to yield microcrystals with a much higher stacking-fault density and correspondingly lower overall crystal symmetry than that found for hexagonal /3-GAS. The results of a highresolution electron-microscopy analysis suggest that this character is associated with the predominance in the material of a high-pressure modification of GaS, present metastably in the partially annealed sample. It is concluded that details of preparation, including final annealing, are important in determining the microscopic crystal structure, and that discrepancies which have been highlighted recently between singlecrystal diffraction measurements and those carried out on bulk microcrystalline samples may largely be explained by differences in preparative technique.
Databáze: OpenAIRE