Internal friction in glassy semiconductors of the Ge-As-Se system

Autor:	I. I. Makauz, V. S. Bilanich, V. B. Onishchak, V. M. Rizak
Rok vydání:	2010
Předmět:	Range (particle radiation) Materials science Solid-state physics business.industry Coordination number Thermodynamics Activation energy Atmospheric temperature range Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Relaxation (physics) business Chemical composition
Zdroj:	Physics of the Solid State. 52:1820-1829
ISSN:	1090-6460 1063-7834
DOI:	10.1134/s1063783410090064
Popis:	Relaxation processes in glasses of the Ge-As-Se system have been investigated by the internal friction technique. The process that can be classified as the β relaxation process has been revealed in the temperature range 180–280 K. The assumption has been made that a change in the magnitude of the internal friction maximum in the above temperature range with a change in the chemical composition is associated with the change in the concentration of structural units responsible for the β relaxation in these materials. It has been established that the activation energy for the α relaxation process in the glasses of the Ge-As-Se system under investigation increases considerably in the range of the average coordination number Z = 2.6.
Databáze:	OpenAIRE
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