Characterization of the Al/RuO2 Interface Upon Thermal Annealing
Autor: | Elzbieta Kolawa, Quat T. Vu, M-A. Nicolet |
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Rok vydání: | 1990 |
Předmět: | |
Zdroj: | MRS Proceedings. 181 |
ISSN: | 1946-4274 0272-9172 |
DOI: | 10.1557/proc-181-531 |
Popis: | We have characterized the Al/RuO2 interface after annealing at temperatures in the range 450° C-550° C for durations up to several hours by backscattering spectrometry, cross-sectional transmission electron microscopy, and electrical four point probe measurement of specially designed structures. The electrical measurement yields the specific contact resistance of the interface by applying a transmission line type model developped for this purpose. An interfacial aluminum-oxygen polycrystalline compound is shown to grow with annealing temperature and duration, with a concurrent reduction of a thin layer of RuO2. However, the specific contact resistance between Al and RuO2 is found to decrease with annealing duration at 500°C. This last result indicates that the interfacial reaction does not lead to an insulating interface as could have been expected if the growth were pure and dense A12O3. |
Databáze: | OpenAIRE |
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