Passivation of Thin Channel Zinc Tin Oxide TFTs Using Al2O3 Deposited by O3-Based Atomic Layer Deposition
| Autor: | Christopher R. Allemang, Rebecca L. Peterson |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry chemistry.chemical_element Field effect Zinc 01 natural sciences Electronic Optical and Magnetic Materials Active layer Threshold voltage Hysteresis Atomic layer deposition chemistry Thin-film transistor 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 40:1120-1123 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2019.2914238 |
| Popis: | Here, we fabricate solution processed zinc tin oxide bottom gate top contact thin film transistors (TFTs) with active layer thickness down to 6 nm by varying the solution molarity and number of layers. As-fabricated devices show hysteresis as large as 12.65 V. The hysteresis is then studied under vacuum to understand the important role of the back channel in electrical performance. After vacuum treatment, the hysteresis measured under vacuum was reduced to −0.05 V. Alumina deposited on the back channel using atomic layer deposition (ALD) is used for passivation. The TFTs passivated with an H2O-based ALD process show conductive behavior after passivation while an O3-based ALD process results in a negative threshold voltage shift dependent on the thickness of the active layer. O3-based passivated devices show good stability with a field effect mobility of 8.3 cm2V−1s−1, ${V}_{t}$ of 5.5 V, and hysteresis of 0.85 V. |
| Databáze: | OpenAIRE |
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