Design and analysis of nano-scale bulk FinFETs

Autor:	Jongmin Shin, Jong-Ho Lee, Kyu-Bong Choi
Rok vydání:	2013
Předmět:	Range (particle radiation) Materials science Gate oxide business.industry Contact resistance Doping Electrical engineering Coupling (piping) Optoelectronics Electron Contact area business Nanoscopic scale
Zdroj:	ASICON
DOI:	10.1109/asicon.2013.6811940
Popis:	Design of 14 nm bulk FinFET is discussed and some properties are analyzed physically. The source/drain junction depth is the most important parameter to reduce off-current, and a punchthrough barrier of a peak concentration higher than ∼2×1018 cm−3 should be formed just underneath the junction depth at the same time. Uniform body doping concentration needs to be designed to have a doping in the range of 2∼4×1017 cm−3. The source/drain contact resistance can be reduced by increasing metal contact area on the source/drain region. The drain current fluctuation with the capture and emission of an electron in a trap inside the gate oxide is less than 2% at a V GS -V th of 0.1 V, and increases slightly due to the increase of coupling as fin width decreases.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::13ff4c7a48a45a2116cfd9f7efb8ea58 https://doi.org/10.1109/asicon.2013.6811940 Zobrazit plný text záznamu