Physical properties of reactive RF sputtered a-IZON thin films
| Autor: | C. R. Escobedo-Galván, Arturo Agustin Ortiz-Hernandez, J.J. Ortega, H. Tototzintle-Huitle, F. Avelar-Muñoz, and J. J. Araiza, Ciro Falcony |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
010308 nuclear & particles physics business.industry General Physics and Astronomy chemistry.chemical_element Zinc Sputter deposition 01 natural sciences Education Amorphous solid law.invention chemistry Electrical resistivity and conductivity law 0103 physical sciences Optoelectronics Crystallization Thin film business Deposition (law) Indium |
| Zdroj: | Revista Mexicana de Física. 65:133-138 |
| ISSN: | 2683-2224 0035-001X |
| DOI: | 10.31349/revmexfis.65.133 |
| Popis: | The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10-3 Ω∙cm to 10-4 Ω∙cm, while the carrier concentration showed values over 1020 cm-3 with mobility between 10 and 21 cm2⸱V-1⸱s-1. The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices. |
| Databáze: | OpenAIRE |
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