Integration of Self-Assembled Porous Silica in Low-k/Cu Damascene Interconnects

Autor:	S. Chikaki, Keizo Kinoshita, Yoshinori Shishida, Ryotaro Yagi, Takenobu Yoshino, Nobuhiro Hata, Takahiro Nakayama, Tetsuo Ono, Masashi Shimoyama, Yutaka Seino, Yuzuru Sonoda, Takamaro Kikkawa, Nobutoshi Fujii
Rok vydání:	2009
Předmět:	Plasma etching Materials science Physics and Astronomy (miscellaneous) General Engineering Analytical chemistry Copper interconnect General Physics and Astronomy Dielectric Silanol chemistry.chemical_compound Chemical engineering chemistry Sputtering Electroplating Porosity Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 48:095002
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.48.095002
Popis:	Integration of a self-assembled porous silica film layered with a cap film was carried out for low-k/Cu damascene structures. The dielectric constant of the porous silica in the layered damascene structure was extracted, and the process-induced damage layer was characterized. Due to the integration process of low-k/Cu damascene, the hydrophobic methyl group was decomposed by plasma etching and subsequent barrier and seed sputtering as well as by Cu electroplating, resulting in the formation of hydrophilic silanol groups. The lateral dimension of the process-induced damaged layer and its effective dielectric constant were found to be 35 nm and 10, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::13e7177468ff7a4719d6071ca60b8320 https://doi.org/10.1143/jjap.48.095002 Zobrazit plný text záznamu