Low V F 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates
| Autor: | Koji Nakayama, Akira Miyasaka, Kazutoshi Kojima, Junji Senzaki, Tomohisa Kato, Kensuke Takenaka, Hajime Okumura, Mitsuru Sometani, Yoshiyuki Yonezawa, Kazuma Eto, Akihiro Koyama |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Doping General Engineering Stacking General Physics and Astronomy Substrate (electronics) 01 natural sciences Acceptor Electrical resistivity and conductivity 0103 physical sciences Optoelectronics business Layer (electronics) Voltage Diode |
| Zdroj: | Japanese Journal of Applied Physics. 59:SGGD14 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | We fabricated 4H-SiC N-i-P (N-intrinsic-P) diodes using newly developed low-resistivity p-type substrates with higher acceptor concentrations than conventional substrate. N-i-P diodes with 10 μm thick n− drift layers were fabricated on both a low-resistivity p-type substrate and a conventional one to investigate the difference in substrate resistance and bipolar degradation with a heavily doped p-type buffer layer. The differential on-resistance of N-i-P diode, using low-resistivity p-type substrates was decreased to one third compared to the conventional case, and the difference was similar to the p-type substrates resistivity. No stacking faults expansion was observed up to 1100 A cm−2. N-i-P diodes with 233 μm thick n− drift layers were fabricated to demonstrate forward characteristics instead of an ultra-high voltage n-channel IGBTs. The forward characteristics of the N-i-P diodes with 233 μm thick n− drift layers at 200 °C showed low on-voltage 6.9 V and low differential on-resistance 32.2 mΩ cm2. |
| Databáze: | OpenAIRE |
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