Scanning ion microscopy and microsectioning of electron beam recrystallized silicon on insulator devices
| Autor: | R. A. M. McMahon, E. C. G. Kirk, J. R. A. Cleaver, Haroon Ahmed |
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| Rok vydání: | 1988 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction Silicon Hybrid silicon laser business.industry General Engineering Analytical chemistry chemistry.chemical_element Silicon on insulator Recrystallization (metallurgy) Hardware_PERFORMANCEANDRELIABILITY Integrated circuit law.invention chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics Electron beam-induced deposition business Field ion microscope |
| Zdroj: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:1940 |
| ISSN: | 0734-211X |
| DOI: | 10.1116/1.584137 |
| Popis: | Structures fabricated during the development of a process for making three‐dimensionally interconnected integrated circuits using electron beam recrystallization of silicon on insulator have been microsectioned and examined in the scanning ion microscope. This provided detailed information, not accessible by standard analysis techniques, concerning the effects of processing at specific sites in the structures.Structures fabricated during the development of a process for making three‐dimensionally interconnected integrated circuits using electron beam recrystallization of silicon on insulator have been microsectioned and examined in the scanning ion microscope. This provided detailed information, not accessible by standard analysis techniques, concerning the effects of processing at specific sites in the structures. |
| Databáze: | OpenAIRE |
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