The Effect of HfO2 Overlayer on the Thermal Stability of SiGe Substrate
| Autor: | Alon Hoffman, Ruth Shima-Edelstein, Rozalia Akhvlediani, E. Lipp, Yakov Roizin, Joseph Salzman, Boris Meyler, I. Milshtein, Sh. Michaelson |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Annealing (metallurgy) Inorganic chemistry Thermal decomposition Analytical chemistry Oxide Electronic Optical and Magnetic Materials Overlayer chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Silicide Thermal stability Electrical and Electronic Engineering Germanium oxide |
| Zdroj: | ECS Solid State Letters. 1:N7-N9 |
| ISSN: | 2162-8750 2162-8742 |
| DOI: | 10.1149/2.001202ssl |
| Popis: | In this work we study the effect of various overlayers on the thermal stability of Si0.8Ge0.2 substrate by X-ray photoelectron spectroscopy. Si0.8Ge0.2 substrates were either covered with native oxide or were HF cleaned and subsequently covered with ∼ 1n m thick HfO2. Our studies reveal different thermal behavior and germanium oxide stoichiometry for these samples. We showed that high temperature annealing (TA ≥1000 ◦ C) results in Hf silicide formation, which is mostly correlated with thermal decomposition of silicon dioxide. |
| Databáze: | OpenAIRE |
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