Novel Equivalent Circuit for Heterojunction Cells and Diagnostic Method Based on Variable Illumination Measurements (VIM)
| Autor: | Merten, J., Coignus, J., Razongles, G., Muñoz, D. |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: | |
| DOI: | 10.4229/27theupvsec2012-2av.6.27 |
| Popis: | 27th European Photovoltaic Solar Energy Conference and Exhibition; 1268-1271 A novel loss term is introduced into the standard equivalent circuit of heterojunction cells, which represents bulk recombination losses. This loss term is modelled as a kind of photoconductor which is an additional shunt loss for the device. Experimental evidence comes from data obtained by Variable Illumination measurements (VIM), where the short circuit resistance Rsc=(V/I)V=0, is presented as a function of logarithmically varying illumination levels. It is only at lowest illumination, that Rsc is determined by leakage currents. At standard illumination levels around one sun, Rsc is determined by the novel bulk recombination term. A confirmation of the nature of the novel loss term comes from numerical device simulations done under SILVACO. The experimental VIM-data come from a novel experimental set-up which is using LEDs for the variation of the illumination level. |
| Databáze: | OpenAIRE |
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