MPACVD growth of single crystalline diamond substrates with PCD rimless and expanding surfaces
| Autor: | Jes Asmussen, Amanda Charris, Shreya Nad |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Scanning electron microscope business.industry Single crystal diamond Diamond 02 engineering and technology Chemical vapor deposition Substrate (electronics) engineering.material 021001 nanoscience & nanotechnology 01 natural sciences law.invention Crystal Crystallography Optical microscope law 0103 physical sciences engineering Optoelectronics 0210 nano-technology business Power density |
| Zdroj: | Applied Physics Letters. 109:162103 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4965025 |
| Popis: | Single crystal diamond (SCD) growth was performed in optimized pocket substrate holders at a high pressure (240 Torr) and a high power density (∼1000 W/cm3). In an effort to overcome the challenges of growing large area SCD substrates without a corresponding polycrystalline diamond (PCD) rim, a growth recipe using these pocket holders was developed. This growth recipe controls the substrate temperature (Ts) and the incident microwave power (Pinc) in a prescribed function of growth time. Through this process, the feasibility to enlarge the SCD substrate in situ, i.e., during the growth itself is shown. By allowing the temperature to increase from ∼980 °C to 1040 °C, then reducing the temperature, and then allowing it to drift up again, the deposition process alternates between the fast growth of the different crystal directions (i.e., 〈110〉, 〈111〉, and 〈100〉) and a slow growth to smoothen the top surface. This leads to an increased lateral SCD growth. The slow growth of the crystal faces in turn leads to a... |
| Databáze: | OpenAIRE |
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