Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyond
| Autor: | Ja-Chun Ku, Jin-Woong Kim, Si-Bum Kim, Jeong-Ho Kim, Choon-Kun Ryu, Su-Youb Lee, Jeong-Mo Hwang, Jae-Seon Yu, Su-Jin Oh, Inazawa Kouichiro |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Silicon oxynitride business.industry Transistor Oxide Insulator (electricity) Surfaces and Interfaces Photoresist Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition law Bit line Optoelectronics Antireflection coating business |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1401-1410 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.582362 |
| Popis: | We intentionally introduced excessive Si during the SiOxNy film deposition in order to increase the etch selectivity-to-SiOxNy for advanced self-aligned contact (SAC) etching in sub-0.25 μm ultralarge scale integration devices. The SiOxNy layer was deposited at a conventional plasma enhanced chemical vapor deposition chamber by using a mixture of SiH4, NH3, N2O, and He. The gas mixing ratio was optimized to get the best etch selectivity and low leakage current. The best result was obtained at 10% Si–SiOxNy. In order to employ SiOxNy film as an insulator as well as a SAC barrier, the leakage current of SiOxNy film was evaluated so that SiOxNy may have the low leakage current characteristics. The leakage current of 10% Si–SiOxNy film was 7×10−9 A/cm2. Besides, the Si-rich SiOxNy layer excellently played the roles of antireflection coating for word line and bit line photoresist patterning and sidewall spacer to build a metal–oxide–semiconductor transistor as well as a SAC oxide etch barrier. The contact oxid... |
| Databáze: | OpenAIRE |
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