On the influence of the stacking sequence in the nucleation of Cu3Si: Experiment and the testing of nucleation models
| Autor: | Bence Parditka, Zoltán Balogh, Guido Schmitz, Patrick Stender, Gerd Hendrik Greiwe, Attila Csik, Ralf Schlesiger, Gábor A. Langer, Mohammed Ibrahim, Zoltán Erdélyi |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Quantitative Biology::Neurons and Cognition Polymers and Plastics Metals and Alloys Nucleation Stacking Atom probe Electronic Optical and Magnetic Materials law.invention Transverse plane chemistry.chemical_compound Crystallography chemistry Chemical physics law Phase (matter) Silicide Ceramics and Composites Classical nucleation theory Thin film |
| Zdroj: | Acta Materialia. 76:306-313 |
| ISSN: | 1359-6454 |
| DOI: | 10.1016/j.actamat.2014.05.006 |
| Popis: | The nucleation of the Cu3Si phase was studied on sputter-deposited Cu/Si/Cu trilayered specimens both in curved and planar geometry. Two experimental methods, atom probe tomography and secondary neutral mass spectrometry, independently confirmed that the Cu on Si interface is significantly broader than the Si on Cu (5.3 vs. 2.4 nm from the atom probe measurements). It is demonstrated that the enhanced mixing on the top interface leads to a reduced nucleation barrier for the silicide phase. The presence of a nucleation barrier for a sharp interface, but no barrier for a broad interface, is reproduced using the polymorphic mode of nucleation. Classical nucleation theory or the transverse nucleation mode failed to explain this behavior. |
| Databáze: | OpenAIRE |
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