| Autor: |
Kan Takada, Y. Arakawa, Tomohiko Yamamoto, M. Yamaguchi, Keizo Takemasa, Y. Maeda, Kenichi Nishi, Takeo Kageyama, M. Sugawara, Yu Tanaka, H. Kondo, Reio Mochida |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.905873 |
| Popis: |
High temperature (>125°C) resistant long-wavelength semiconductor lasers are attractive as light sources in a variety of harsh environments. Here, we report extremely high temperature continuous-wave (CW) operation of QD lasers on GaAs substrate emitted at 1300-nm-range by enhancing gain and increasing the quantized-energy separation of the QD active layers. A suppression of the In out-diffusion during MBE from self-assembled InAs QDs significantly reduced inhomogeneous broadening with high QD sheet density maintained. QD-FP laser exhibited record high CW-lasing temperature for long-wavelength laser of 220°C and QD-DFB laser also exhibited high CW-lasing temperature of 150°C by employing high gain QD active media. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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