a-Si:H/c-Si interface hydrogenation for implied Voc = 755 mV in Silicon heterojunction solar cell
| Autor: | Anishkumar Soman, S.S. Hegedus, Tingyi Gu, Ujjwal Das, Ugochukwu Nsofor |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
020209 energy Analytical chemistry Heterojunction 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Amorphous solid law.invention symbols.namesake law Solar cell 0202 electrical engineering electronic engineering information engineering symbols Wafer Crystalline silicon Fourier transform infrared spectroscopy 0210 nano-technology Raman spectroscopy |
| Zdroj: | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc40753.2019.8980808 |
| Popis: | The amorphous (a-Si:H) and crystalline silicon (c-Si) interface plays a pivotal role in determining the V oc of the silicon heterojunction solar cell. Extrinsic hydrogenation by plasma treatment of the a-Si:H films is shown in this work to be a viable option to reduce the interface recombination. The mechanism of hydrogenation has been studied by analyzing the H bond configuration using Fourier Transform Infrared Spectroscopy and Raman spectroscopy. We have obtained an implied V oc of 755 mV and minority carrier lifetime of 4.6 ms for 10 nm thick hydrogen treated intrinsic a-Si:H films on textured n-type Cz silicon wafers. The proof of concept has been validated by fabricating front junction cells having V oc of 729 mV, with our best cell results reaching 20.2% efficiency. |
| Databáze: | OpenAIRE |
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