The infra-red photoresponse of erbium-doped silicon nanocrystals
| Autor: | Anthony J. Kenyon, S.S Bhamber, C.W. Pitt |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon Laser diode business.industry Mechanical Engineering Doping Oxide Nanocrystalline silicon chemistry.chemical_element Strained silicon Condensed Matter Physics law.invention Nanoclusters Erbium chemistry.chemical_compound chemistry Mechanics of Materials law Optoelectronics General Materials Science business |
| Zdroj: | Materials Science and Engineering: B. 105:230-235 |
| ISSN: | 0921-5107 |
| Popis: | We have exploited the interaction between erbium ions and silicon nanoclusters to probe the photoresponse of erbium-doped silicon nanocrystals in the spectral region around 1.5 μm. We have produced an MOS device in which the oxide layer has been implanted with both erbium and silicon and annealed to produce silicon nanocrystals. Upon illumination with a 1480 nm laser diode, interaction between the nanocrystals and the rare-earth ions results in a modification of the conductivity of the oxide that enables a current to flow when a voltage is applied across the oxide layer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect