Circuit development of FGMOS in operational amplifier for low voltage low power applications: A review

Autor: Muhammad M. Ramli, D. Nurulain, Nisar Ahmad, F.A. Musa, M. Mohamad Isa
Rok vydání: 2017
Předmět:
Zdroj: AIP Conference Proceedings.
ISSN: 0094-243X
DOI: 10.1063/1.5002465
Popis: As a result of increasing demand for compact electronic device, Floating Gate MOSFET (FGMOS) is implemented into operational amplifier. It can help to scale down the device dimensions as well as the supply voltage. This design technique enable the control of threshold voltage and reduce the complexity of a circuit. The objective of this paper is to review the design of an operational amplifier with certain criteria such as low supply voltage less than 1 V, high bandwidth and low power consumption. From the reviewed results of previous works, it can be concluded the best circuit design of FGMOS based operational amplifier in means for low voltage and power consumption is proposed by Mourabit A El. et al., where the circuit can be operated at 1.5 V for voltage supply and consume power at the value of 2 µW.
Databáze: OpenAIRE