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The ongoing development of short-period semiconductor superlattices for electronic and optoelectronic applications requires atomic-scale control of epitaxial growth, especially at the interfaces. Given this requirement, there is a critical need for in situ characterization on the atomic scale as provided by scanning tunneling microscopy (STM). Here we describe a sample handling system designed to integrate a modified commercial STM into a multichamber ultrahigh vacuum (UHV) molecular beam epitaxy (MBE) facility. The system uses a simple, yet versatile, sample holder design that enables quick and easy sample transfers between multiple chambers, including two Riber MBE and two surface characterization chambers interconnected by Riber UHV ModuTrac (Trademark). |
