Influence of domain boundaries on polarity of GaN grown on sapphire
| Autor: | John Bell, F Phillipp, Hao Zhou, H Schroder |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
business.industry
Semiconductor materials General Physics and Astronomy Gallium nitride Surfaces and Interfaces General Chemistry Convergent beam Condensed Matter Physics Epitaxy Surfaces Coatings and Films chemistry.chemical_compound Crystallography Electron diffraction chemistry Transmission electron microscopy Sapphire Optoelectronics business High-resolution transmission electron microscopy |
| Zdroj: | Applied Surface Science. 252:483-487 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2005.01.026 |
| Popis: | GaN films were grown on sapphire substrates by laser-induced reactive epitaxy. The domains in the films were determined to be the Ga-polarity by the convergent beam electron diffraction (CBED) technique, while the adjacent matrices had the N-polarity. The domain boundaries were characterized as inversion domain boundaries (IDBs). An atomic structure of the IDB is proposed based on high-resolution transmission electron microscopy (HRTEM) investigations. Control of the polarity of GaN/sapphire films was achieved by suppressing the formation of IDBs with an interlayer of AlGaN and a low-temperature GaN buffer layer. |
| Databáze: | OpenAIRE |
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