Autor: |
Nanditha Dissanayake, Sapna S. Mukherjee, Vinit H. Dhulla, Adam O. Lee, Booshik Ryu, Charles Myers |
Rok vydání: |
2019 |
Předmět: |
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Zdroj: |
Advanced Photon Counting Techniques XIII. |
DOI: |
10.1117/12.2523084 |
Popis: |
Initial results of electrical and optical characterization of Voxtel’s first generation 256 x 256 dual-mode silicon singlephoton avalanche diode (SPAD) image sensor are presented. The SPAD image sensor is a dual-mode device capable of sequential passive single-photon-counting (2D) and active single-photon lidar (3D) range imaging at greater than 250 frames per second, full-frame. The sensor was developed in 180-nm complementary metal-oxide semiconductor imagesensor technology with a pixel pitch of 30 μm and fill factor of 9%; and it achieves room temperature per-pixel dark count rate of less than 55 Hz (0.63 Hz/μm2), peak photon detection probability of 29% (at 480 nm) and timing jitter of 268 ps full width at half maximum at the optimal operating point. Preliminary imaging results in 2D and 3D mode are presented. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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