Direct contact of indium tin oxide layer to Al(Ni) alloy electrodes for a-Si:H thin film transistors: Effects of Ni alloying on interfacial oxide growth and contact resistance
| Autor: | Yang-Ho Bae, Chang-Oh Jeong, Jaegab Lee, Ho-Seok Nam, Dooman Han, K. B. Lee, Kyunghoon Jeong |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Annealing (metallurgy) Schottky barrier Contact resistance Alloy Metallurgy Metals and Alloys Surfaces and Interfaces engineering.material Surfaces Coatings and Films Electronic Optical and Magnetic Materials Indium tin oxide Chemical engineering Thin-film transistor Sputtering Materials Chemistry engineering Thin film |
| Zdroj: | Thin Solid Films. 546:9-13 |
| ISSN: | 0040-6090 |
| Popis: | Sputtering of indium tin oxide (ITO) on pure Al substrate produces an Al 2 O 3 layer at the interface, leading to Schottky contact characteristics. A very small amount of Ni (2 at.% Ni) added to Al drastically reduces the contact resistance of an ITO/Al(Ni) alloy electrode to approximately 4.3 × 10 - 4 Ω-cm 2 , with a low electrical resistivity of ~ 3 μΩ-cm, demonstrating the feasibility of using ITO/Al(Ni) alloy structures as electrodes for a-Si:H thin film transistors. The mechanism for initial interfacial oxidation occurring during sputtering of ITO on the surface of Al(Ni) and subsequent annealing at 320 °C was proposed to reveal the role of Ni during the sputtering and annealing processes. |
| Databáze: | OpenAIRE |
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