Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates

Autor:	Ahmet Refik Kortan, B. Bolliger, J. Kwo, Minghwei Hong, Joseph Petrus Mannaerts, Mehmet Erbudak
Rok vydání:	2000
Předmět:	Condensed matter physics Chemistry Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Epitaxy Electron spectroscopy Secondary electrons Surfaces Coatings and Films Ion Nuclear magnetic resonance Sputtering Secondary emission Materials Chemistry Thin film
Zdroj:	Surface and Interface Analysis. 30:514-517
ISSN:	1096-9918 0142-2421
DOI:	10.1002/1096-9918(200008)30:1<514::aid-sia760>3.0.co;2-k
Popis:	The structure and alignment of epitaxial molecular-beam-epitaxy-grown single-crystal Gd2O3 films on GaAs(100) are studied using secondary electron imaging. We have found that the 115 A thick Gd2O3 film has a cubic structure. The [110] axis is aligned perfectly with the surface normal of the substrate. The secondary electron patterns are recorded during sequential sputtering with 1000 eV Ne+ ions. They show that the [001] and [110] directions of the film overlap with the [011] and [011] directions of the substrate with a high degree of site registry of atoms at the interface. Copyright © 2000 John Wiley & Sons, Ltd.
Databáze:	OpenAIRE
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