Formation of n and p Regions in (114) and (5 5 12)-Silicon Substrates

Autor:	P. Rosales-Q, Edmundo A. Gutierrez-D, Don L. Kendall, F. Javier De la Hidalga-W, W. Calleja-A, A. Torres-J
Rok vydání:	2007
Předmět:	Crystallography Materials science Silicon chemistry chemistry.chemical_element
Zdroj:	ECS Transactions. 6:29-33
ISSN:	1938-6737 1938-5862
Popis:	In this work, the diffusion mechanisms of both boron and phosphorus dopants are analyzed when they are ion-implanted and thermally activated in high-index silicon substrates. Si(1 1 4) and Si(5 5 12) wafers are reported as highly promising substrates for the development of novel quantum structures specially for MOS devices. In order to obtain the final dopant distribution an electrochemical profiler was utilized. Because it is well known the lack of reported experimental data regarding the doping mechanism in these high-index silicon substrates, Si(1 0 0) and Si(1 1 1) substrates were utilized as reference. The experimental work was conducted varying the following ion implantation parameters: dose, energy, tilt angle, and silicon oxide masking film thickness; the thermal activation of the impurities was specially evaluated because their influence in the final distribution of dopants.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::131e480274f99949b2a6722dbc848c44 https://doi.org/10.1149/1.2811693 Zobrazit plný text záznamu