Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
| Autor: | D.L. John, D.L. Pulfrey |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Transistor Gate dielectric Nanotechnology Carbon nanotube Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Carbon nanotube field-effect transistor Azimuth Computer Science::Hardware Architecture Computer Science::Emerging Technologies Azimuthal asymmetry law Gate oxide Modeling and Simulation Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Journal of Computational Electronics. 6:175-178 |
| ISSN: | 1572-8137 1569-8025 |
| DOI: | 10.1007/s10825-006-0080-z |
| Popis: | Factors affecting the modeling of practical carbon nanotube field-effect transistors are addressed, namely: non-coaxial geometries such as the double-planar gate, and the semi-cylindrical gate; the thickness of the gate metalization; the azimuthal variation of the potential and the current. The p-i-n device is used to illustrate the importance of these factors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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