Experimental Research on Preparation of SiN Films by Magnetron Sputtering

Autor:	Jian Jun Yang, Zai Yu Zhang, Yan Hui Wu
Rok vydání:	2014
Předmět:	Deposition rate Materials science Deposition pressure business.industry Sputtering General Engineering Optoelectronics Wafer Sputter deposition business Experimental research Deposition temperature
Zdroj:	Advanced Materials Research. :208-211
ISSN:	1662-8985
DOI:	10.4028/www.scientific.net/amr.960-961.208
Popis:	In this paper, the SiN film was deposited on Si wafer, and the deposition rate of the SiN film was discussed with different parameters such as the sputtering power, deposition temperature, deposition pressure and ratio of N2/(N2+Ar). The result showed that the optimal parameter for SiN film were 60W, 300°C, 2.5% and 1Pa, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::131ad9d19223df0d93e5fff9bf7ecbb9 https://doi.org/10.4028/www.scientific.net/amr.960-961.208 Zobrazit plný text záznamu