Transport property improvements of amorphous In–Zn–O transistors with printed Cu contacts via rapid temperature annealing
| Autor: | Young Hun Han, Hyun Ju Seol, Ju Yeon Won, Jae Kyeong Jeong, Ki June Lee, Rino Choi |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Diffusion barrier Annealing (metallurgy) Tantalum chemistry.chemical_element 02 engineering and technology 01 natural sciences law.invention law 0103 physical sciences Materials Chemistry 010302 applied physics business.industry Transistor Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Semiconductor chemistry Thin-film transistor Optoelectronics 0210 nano-technology business |
| Zdroj: | Thin Solid Films. 603:268-271 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2016.02.032 |
| Popis: | The device performance of amorphous In–Zn–O ( a -IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a -IZO TFTs with Cu/Ta contacts exhibited mobility values of 21.3 cm 2 /Vs, subthreshold gate swing ( SS ) values of 1.9 V/decade, and I ON / OFF of ~ 10 6 . In contrast, the SS , mobility, and I ON / OFF ratio of RTP-annealed a -IZO TFTs with Cu/Ta contacts were 30.6 cm 2 /Vs, 0.68 V/decade, and 3 × 10 7 , respectively. We attributed the performance improvement of devices with Cu/Ta contacts to the suppression of Cu in-diffusion within the a -IZO channel due to the rapid heating associated with RTP annealing. |
| Databáze: | OpenAIRE |
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