Nanoheteroepitaxial structures with quantum dots obtained by liquid-phase epitaxy based on GaP
Autor: | S.V. Bondarec, S.YU. Bykovskij, I.E. Maronchuk, I.I. Maronchuk, A.N. Petrash, S.B. Smirnov, D.D. Sanikovich |
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Rok vydání: | 2011 |
Předmět: | |
Zdroj: | Electronics and Communications. 16:15-20 |
ISSN: | 2312-1807 1811-4512 |
DOI: | 10.20535/2312-1807.2011.16.4.242710 |
Popis: | A method of an obtaining of nanoheterostructures with arrays of quantum dots by a process of liquid phase epitaxy with a pulse cooling and a heating of substrate are described. Experimental results for a growing of heterostructures on a base of GaP with quantum dots Ge, InAs and for an investigation of parameters by the atomic-power microscopy and photoluminescence are presented. |
Databáze: | OpenAIRE |
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