Nanoheteroepitaxial structures with quantum dots obtained by liquid-phase epitaxy based on GaP

Autor: S.V. Bondarec, S.YU. Bykovskij, I.E. Maronchuk, I.I. Maronchuk, A.N. Petrash, S.B. Smirnov, D.D. Sanikovich
Rok vydání: 2011
Předmět:
Zdroj: Electronics and Communications. 16:15-20
ISSN: 2312-1807
1811-4512
DOI: 10.20535/2312-1807.2011.16.4.242710
Popis: A method of an obtaining of nanoheterostructures with arrays of quantum dots by a process of liquid phase epitaxy with a pulse cooling and a heating of substrate are described. Experimental results for a growing of heterostructures on a base of GaP with quantum dots Ge, InAs and for an investigation of parameters by the atomic-power microscopy and photoluminescence are presented.
Databáze: OpenAIRE