Electronic Conductivity of Single Crystalline Magnesium Oxide

Autor:	D. R. Sempolinski, W. D. Kingery, Harry L. Tuller
Rok vydání:	1980
Předmět:	Dopant Magnesium business.industry Doping Inorganic chemistry Analytical chemistry chemistry.chemical_element Ionic bonding Electron Semiconductor chemistry Materials Chemistry Ceramics and Composites Electronic conductivity business Equilibrium constant
Zdroj:	Journal of the American Ceramic Society. 63:669-675
ISSN:	1551-2916 0002-7820
DOI:	10.1111/j.1151-2916.1980.tb09858.x
Popis:	The electronic conductivity of MgO was determined by measuring the dc conductivity and ionic transference number as a function of temperature (1200° to 1600°C), oxygen pressure (10−1 to 10−13 MPa), and trivalent solute concentration (65 to 1500 ppm) using samples doped with Al, Fe, or Sc so that only one dopant controlled the defect structure. The electronic conductivity showed ap- to n-type transition with decreasing oxygen pressure, consistent with a defect structure in which the concentrations of the electronic species are negligible with respect to those of the ionic defects, so that MgO is a fully compensated semiconductor. From the temperature dependence of the electronic conductivity minima, a thermal band gap of 650±50 kj/mol (6.8±0.5 eV/electron) and electron and hole mobilities of 24 and 7 cm2/V·s were determined at 1400°C. From these results, the defect-reaction equilibrium constants were determined.
Databáze:	OpenAIRE
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