| Autor: |
Chong Yu Jiang, Hongyi Xu, Song Lin Yang, Heng Yu Wang, Na Ren, Kuang Sheng |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Key Engineering Materials. 945:71-76 |
| ISSN: |
1662-9795 |
| DOI: |
10.4028/p-f1aq7k |
| Popis: |
In this work, 1200 V SiC JMOS devices with different Wsch (2 μm, 2.5 μm and 3 μm) are fabricated. The single unclamped inductive switching (UIS) tests under different Vgs_off (-5 V and 0 V) are carried out to investigate the avalanche capability. The avalanche robustness among various Wsch under same Vgs_off is also compared and analyzed by simulation. The different failure mechanisms between different Vgs_off are studied by failure analysis and simulation. The method of improving avalanche ruggedness of JMOS is proposed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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