Sub-10 nm lateral spatial resolution in scanning capacitance microscopy achieved with solid platinum probes
| Autor: | Clayton C. Williams, Ezra Bussmann |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Transistor Resolution (electron density) Silicon on insulator Nanotechnology Scanning capacitance microscopy law.invention Scanning probe microscopy law Scanning ion-conductance microscopy Optoelectronics Field-effect transistor business Instrumentation Image resolution |
| Zdroj: | Review of Scientific Instruments. 75:422-425 |
| ISSN: | 1089-7623 0034-6748 |
| DOI: | 10.1063/1.1641161 |
| Popis: | Sub-10 nm resolution can be obtained in scanning capacitance microscopy (SCM) if the probe tip is approximately of the same size. Such resolution is observed, although infrequently, with present commercially available probes. To acquire routine sub-10 nm resolution, a solid Pt metal probe has been developed with a sub-10 nm tip radius. The probe is demonstrated by SCM imaging on a cross-sectioned 70 nm gatelength field-effect transistor (FET), a shallow implant (n+/p, 24 nm junction depth), and an epitaxial staircase (p, ∼75 nm steps). Sub-10 nm resolution is demonstrated on the FET device over the abrupt meeting between a silicon-on-insulator oxide layer and a neighboring Si region. Comparable resolution is observed on the implant structure, and quantitative SCM dopant profiling is performed on it with sub-10 nm accuracy. Finally, the epitaxial staircase structure is quantitatively profiled demonstrating the accuracy obtained in quantitative profiling with the tips. |
| Databáze: | OpenAIRE |
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