Effect of deviations from the stoichiometric composition on the electrical and photoelectrical properties of the Hg3In2Te6 compound

Autor:	S. M. Chupyra, S. V. Bilichuk, O. G. Grushka, O. M. Mysliuk, A. I. Savchuk, V. V. Shlemkevych
Rok vydání:	2014
Předmět:	Photocurrent Band gap Chemistry Photoconductivity Analytical chemistry Photoelectric effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystallography Wavelength Absorption edge Yield (chemistry) Charge carrier
Zdroj:	Semiconductors. 48:1271-1274
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782614100091
Popis:	The results of studying the electrical and photoelectric properties of Hg3In2Te6 bulk crystals with stoichiometric composition and of Hg3(1 + δ)In2(1 − δ)Te6 crystals with a deviation from the stoichiometric composition of δ = ±0.06 are reported. It is shown that variations in the ratio between the Hg and In components in the crystals yield an increase in the concentration of mutually compensating donors and acceptors which barely affect the position of the donor level in the band gap (the level energy is ED = Ec − (0.18 ± 0.02) eV, but determine the photoconductivity spectrum near the fundamental absorption edge. An expression for the wavelength dependence of the photocurrent and the parameters of nonequilibrium charge carriers are presented to describe the experimental data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12ed5b92cec1f42920803e58390c9ad3 https://doi.org/10.1134/s1063782614100091 Zobrazit plný text záznamu Plný text ve formátu PDF