Polarization Reversal of (111)- and (100)/(001)-Oriented Pb(Zr,Ti)O3 Thin Film Capacitors with SrRuO3 and IrO2 Thin Film Top Electrodes
| Autor: | Mineharu Tsukada, Jeffrey S. Cross, Mitsuteru Mushiga |
|---|---|
| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Journal of the Ceramic Society of Japan. 112:311-315 |
| ISSN: | 1882-1022 0914-5400 |
| DOI: | 10.2109/jcersj.112.311 |
| Popis: | (111)- and (100) / (001)-oriented Pb(Zr,Ti)O 3 (PZT) thin films were deposited using a chemical-solution deposition (CSD) method. For the top electrodes, IrO 2 and SrRuO 3 (SRO) thin films were deposited by sputtering. The ferroelectric properties and crystal structure of the (111) - and (100) / (001)-oriented PZT thin-film capacitors were evaluated. The switchable polarization (Qsw) of a (100) / (001)-oriented PZT capacitor with an SRO top electrode was lower than that with an IrO 2 top electrode. The opposite trend in Qsw was observed with IrO 2 and SRO top electrodes in (111)-oriented PZT capacitors. With continuous switching cycles, the Qsw of a (100)/(001)-oriented PZT capacitor with IrO 2 increased continuously with an increasing number of cycles. However, there was no increase in Qsw in a (100) / (001) -oriented PZT capacitor with SRO. Transmission electron microscopy (TEM) observation showed a local epitaxial-like interface between the SRO and PZT in both the (111) and (100) / (001) orientation. However, a heterostructure was observed in the IrO 2 /PZT interface in both orientations. TEM also showed the existence of several 90° domains in the (100) / (001)-oriented PZT films. At the SRO/PZT(100) / (001) interface, this local epitaxial-like interface seemed to block the movement of the 90° domain wall. As a result, the Qsw was lower in a (100) / (001) -oriented PZT capacitor with SRO than that with IrO 2 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|