High bandwidth memory(HBM) with TSV technique

Autor:	Jonghoon Oh, Dong Beom Lee, Jong Chern Lee, Kyung Whan Kim, Tae Sik Yun, Hyeon Gon Kim, Sangmuk Oh, Jae-Jin Lee, Young Jun Ku, Hongjung Kim, Ho Sung Cho, Jun Hyun Chun, Hyun-Sung Lee, Ki Hun Kwon, Ji-hwan Kim, Young Jae Choi, Seok-Hee Lee, Chun-Seok Jeong, Dae Suk Kim
Rok vydání:	2016
Předmět:	010302 applied physics Very-large-scale integration Engineering Random access memory Hardware_MEMORYSTRUCTURES business.industry Bandwidth (signal processing) 020206 networking & telecommunications Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology High Bandwidth Memory 01 natural sciences Embedded system 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Hardware_ARITHMETICANDLOGICSTRUCTURES business Dram
Zdroj:	ISOCC
DOI:	10.1109/isocc.2016.7799847
Popis:	In this paper, HBM DRAM with TSV technique is introduced. This paper covers the general TSV feature and techniques such as TSV architecture, TSV reliability, TSV open / short test, and TSV repair. And HBM DRAM, representative DRAM product using TSV, is widely presented, especially the use and features.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12e2566f6de4e93bbf2dd1c9055d10a7 https://doi.org/10.1109/isocc.2016.7799847 Zobrazit plný text záznamu