The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT

Autor:	Subhasis Ghosh, Vikram Kumar, V.R. Balakrishnan
Rok vydání:	2005
Předmět:	Physics Condensed matter physics Scattering Transconductance Conductance High-electron-mobility transistor Low frequency Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials Impurity Dispersion (optics) Materials Chemistry Electrical and Electronic Engineering
Zdroj:	Semiconductor Science and Technology. 20:783-787
ISSN:	1361-6641 0268-1242
Popis:	Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic(CDLTS) studies of an AlGaAs/InGaAs pseudomorphic HEMT were carried out. The experimental results show the presence of defect states at the AlGaAs/InGaAs hetero-interface. A mobility degradation model was developed to explain the low frequency negative transconductance dispersion as well as the apparent hole-like peaks observed in the CDLTS spectra. This model incorporates a time dependent change in 2DEG mobility due to ionised impurity scattering by the remaining charge states at the adjoining AlGaAs/InGaAs hetero-interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12e23bde2a1634ac2cd770b986bdf4fe https://doi.org/10.1088/0268-1242/20/8/024 Zobrazit plný text záznamu