Complementary Two-Dimensional (2-D) FET Technology With MoS2/hBN/Graphene Stack

Autor:	Zichao Ma, Cristine Jin Estrada, Mansun Chan
Rok vydání:	2021
Předmět:	Materials science business.industry Graphene Transistor Gate dielectric Electronic Optical and Magnetic Materials law.invention Threshold voltage Noise margin chemistry.chemical_compound CMOS chemistry law Inverter Optoelectronics Electrical and Electronic Engineering business Molybdenum disulfide
Zdroj:	IEEE Electron Device Letters. 42:1890-1893
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2021.3124823
Popis:	This paper demonstrates a complementary 2-D field-effect transistor (FET) technology with molybdenum disulfide (MoS2) as the active film, hexagonal boron nitride (hBN) as the gate dielectric, and graphene as the gate electrode. The active region of the n-channel (n-FET) and p-channel (p-FET) devices are formed by undoped and Nb-doped MoS2, respectively. The complementary FETs have the desirable threshold voltage polarity, similar current drive, and high on-off current ratios of more than 106. A complementary metal-oxidesemiconductor (CMOS) inverter has been fabricated and the measured gain is about 14 with 90% noise margin at a 2 V power supply.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12dcb31d902212bc634562bcebc92cdd https://doi.org/10.1109/led.2021.3124823 Zobrazit plný text záznamu