Processing tungsten single crystal by chemical vapor deposition

Autor: Lester L. Begg, Ralph H. Zee, Zhigang Xiao
Rok vydání: 2000
Předmět:
Zdroj: AIP Conference Proceedings.
ISSN: 0094-243X
DOI: 10.1063/1.1290965
Popis: A tungsten single crystal layer has been fabricated on molybdenum single crystal substrate through the hydrogen (H2) reduction of the tungsten hexafluoride (WF6) in low pressure. Substrate temperature, reaction chamber pressure, and flow rate of WF6 and H2, are critical process parameters during deposition. A comprehensive analysis for the effects of these parameters on single crystal layer growth has been processed and optimized growth conditions have been achieved. The different orientation of the substrate shows the different deposition rate for tungsten. Low index plane has higher deposition rate than high index plane. The kinetics of the deposition process has also been investigated. SEM surface analysis indicates that the single crystal layer is smooth in macro-scale and rough and step-growth format in micro-scale.
Databáze: OpenAIRE