Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer

Autor:	L. Larson, Peter Zeitzoff, C. Metzner, Chadwin D. Young, S. Kher, A. Agarwal, Mark Gardner, Howard R. Huff, Robert W. Murto, C. Lim, Y. Kim, Brendan Foran, Gennadi Bersuker, George A. Brown, Joel Barnett, Ken Matthews
Rok vydání:	2004
Předmět:	Electron mobility Materials science Silicon business.industry Gate dielectric Transistor chemistry.chemical_element Equivalent oxide thickness law.invention chemistry law Gate oxide MOSFET Electronic engineering Optoelectronics business Metal gate
Zdroj:	2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
Popis:	Conventional poly-Si gate MOS transistors with a high-k gate-dielectric were fabricated using a novel, ultra-thin Hf-oxide. Various integration effects on the high-k layer were studied such as Si-surface preparation, deposition conditions, and post-deposition anneals, demonstrating EOT of 1.6 to 1.2 nm and excellent gate leakage current. Promising transistor behaviors were obtained including electron mobility up to 90% of SiO/sub 2/ at both peak and high-field.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12d03c95ba4fabbe44ce4f4b990cfa0e https://doi.org/10.1109/vlsit.2003.1221138 Zobrazit plný text záznamu