Application of reflectance studies to layered samples: SiOx on InSb
Autor: | G. Remond, Paul H. Holloway, P. Ruzakowski, R. Caye |
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Rok vydání: | 1988 |
Předmět: |
chemistry.chemical_classification
Materials science business.industry Spatially resolved Analytical chemistry Surfaces and Interfaces General Chemistry Substrate (electronics) Molar absorptivity Condensed Matter Physics Reflectivity Surfaces Coatings and Films Optics chemistry Homogeneous Materials Chemistry business Refractive index Inorganic compound Layer (electronics) |
Zdroj: | Surface and Interface Analysis. 11:134-143 |
ISSN: | 1096-9918 0142-2421 |
DOI: | 10.1002/sia.740110303 |
Popis: | Spatially resolved optical micro-reflectometry in the visible region (from 400 nm to 800 nm) is used to study InSb substrates covered with SiOx (1 < x < 2) films of known thicknesses. Using optical constants (refractive index and extinction coefficient) for uncoated InSb derived from two successive reflectance measurements carried out in air and oil, a model of absorbing films on an absorbing substrate was used to calculate the reflectance. Comparison of measured and calculated reflectances for SiO2 films over InSb demonstrate the validity of the model for an absorbing substrate covered with a homogeneous layer. Optical constants for the SiOx layers are obtained from comparisons between experimental and calculated reflectance curves. |
Databáze: | OpenAIRE |
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