Detection of As2O3 arsenic oxide on GaAs surface by Raman scattering
| Autor: | Lucia G Quagliano |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
inorganic chemicals
congenital hereditary and neonatal diseases and abnormalities Inorganic chemistry technology industry and agriculture Oxide nutritional and metabolic diseases General Physics and Astronomy chemistry.chemical_element macromolecular substances Surfaces and Interfaces General Chemistry Condensed Matter Physics Isotropic etching Surfaces Coatings and Films Amorphous solid symbols.namesake chemistry.chemical_compound chemistry Nitric acid symbols Arsenic oxide Raman spectroscopy Arsenic Raman scattering |
| Zdroj: | Applied Surface Science. 153:240-244 |
| ISSN: | 0169-4332 |
| Popis: | GaAs samples after wet chemical etching in nitric acid have been investigated for the first time by Raman spectroscopy. The GaAs surface prepared by this chemical etching results in a rough surface structure with an intrinsic chemically formed oxide film. The Raman scattering data suggest that the oxide layer is primarily composed of As 2 O 3 in the crystalline form of arsenolite. This oxide film has been found to be subjected to a tensile stress. No experimental Raman observation of this kind of As 2 O 3 arsenic oxide on oxided GaAs surfaces has been reported yet. No trace of amorphous arsenic and of elemental As has been detected. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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