| Autor: |
Vitalij Lissotschenko, Dirk Hauschild |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
Subsecond Annealing of Advanced Materials ISBN: 9783319031309 |
| DOI: |
10.1007/978-3-319-03131-6_8 |
| Popis: |
The use of laser technologies for the well-defined selective heating of wafers and thin film semiconductors for melt and non-melt rapid thermal processing (RTP) is an alternative way to fulfill the cost and performance goals of the 2nd and 3rd generation of photovoltaic products and other types of thin film electronics as well. A variety of efficient and reliable laser sources are available from UV to IR that can match the absorption characteristics of nearly any material layers and layer stacks. To make technical and economical use of these advantages the laser power has to be focused on the surface with a well-defined beam geometry and intensity profile. For fastest processing of e.g. Gen 5 to Gen 10 solar panels a linear scanning with a line or a rectangular beam profile is needed to achieve the required productivity. In addition to the beam geometry, the intensity distribution in scanning direction is an essential parameter for a controlled temporal heating and cooling profile of the thin film materials. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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