Ultra High Density SoIC with Sub-micron Bond Pitch

Autor: M. F. Chen, Y. H. Chen, C. A. Yang, W. C. Chiou, C. C. Kuo, Douglas Yu, C. H. Tung
Rok vydání: 2020
Předmět:
Zdroj: 2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
DOI: 10.1109/ectc32862.2020.00096
Popis: An ultrahigh density 3D technology, SoIC_UHD, with sub-micron pitch inter-chip vertical interconnect enabling a density ≥ 1.2 million bonds/mm2 is reported for the first time. Proven yield and reliability of SoIC_UHD are demonstrated with a foundry front-end wafer level 3D heterogeneous system integration (WLSI) platform. SoC deep partitioning into mini chiplets with SoIC_UHD can extend Moore's Law for longer term than that achieved by conventional 3DIC stacking with micro-bumps. Microsystem scaling, which is complementary to transistor scaling, can continue to improve transistor density, system PPA, and cost competitiveness.
Databáze: OpenAIRE