| Popis: |
A photoreceiver consisting of a monolithically integrated avalanche photodiode and a CMOS transimpedance amplifier is presented. The sensitivity has been analysed theoretically through simulations and a detailed noise analysis. Sensitivity results are presented based on the OEIC being fabricated in a 1.5 μm CMOS process. At 2 Gb/s, the receiver has sensitivities of -33.5 dBm and -34.7 dBm for 650 nm and 850 nm light respectively, which exceed the performance of other reported CMOS photoreceivers. |
