Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices
| Autor: | Dong Soo Yoon, Sung-Man Lee, Jae Sung Roh, Hong Koo Baik |
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| Rok vydání: | 2002 |
| Předmět: |
Diffusion barrier
Chemistry General Chemical Engineering Nanotechnology Chemical vapor deposition Dielectric Condensed Matter Physics Engineering physics Electronic Optical and Magnetic Materials law.invention Non-volatile memory Atomic layer deposition Capacitor law Electrical and Electronic Engineering Physical and Theoretical Chemistry Diffusion (business) Volatile memory |
| Zdroj: | Critical Reviews in Solid State and Materials Sciences. 27:143-226 |
| ISSN: | 1547-6561 1040-8436 |
| DOI: | 10.1080/10408430208500495 |
| Popis: | This article reviews the current status of high-density capacitor for volatile memory devices. The dielectric properties for both the Ta2O5 film and the (Ba, Sr)TiO3 (BST) dielectric materials using either the metal organic chemical vapor deposition (MOCVD) or the atomic layer deposition (ALD) are reviewed briefly. New challenges of dielectric material for the next generation, and serious problems emerged during integration to date using Ta2O5 and BST. The material characteristics of many electrode materials for the high dielectric materials are introduced. We present the basic properties and integration issued for MOCVD-ruthenium (Ru). The second part of this review summarized the failure mechanisms from barrier properties of previously reported diffusion barriers and emphasizes new design concepts of diffusion barrier for high-density memory devices. Finally, the future direction for a diffusion barrier to advance high-density memory capacitors is suggested. |
| Databáze: | OpenAIRE |
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