Monster motion [power semiconductors]
| Autor: | G. Tchouangue |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Gate turn-off thyristor
Engineering business.industry Electrical engineering Energy Engineering and Power Technology Thyristor Hardware_PERFORMANCEANDRELIABILITY Insulated-gate bipolar transistor AC motor Integrated gate-commutated thyristor Fuel Technology Current injection technique Hardware_INTEGRATEDCIRCUITS Electronic engineering Snubber Power semiconductor device Electrical and Electronic Engineering business Hardware_LOGICDESIGN |
| Zdroj: | Power Engineer. 18:40 |
| ISSN: | 0950-3366 |
| DOI: | 10.1049/pe:20040308 |
| Popis: | In recent years, high voltage drives and controls including inverters for traction control and high power drives for industrial motion control have adopted emerging technologies to meet cost, reliability and efficiency needs. Take, for example, the gate turn-off thyristor (GTO). This device has led to the use of cheap, robust asynchronous AC motors in variable speed control applications. Later developments brought us the gate commutated thyristor (GCT). This simplifies the gate drive and snubber circuit requirements of GTOs. Meanwhile, power insulated gate bipolar transistors (IGBT) are also taking great strides forward and are now being used with 1000 to 1500 V DC links. And now that injection enhanced insulated gate bipolar transistors (IEGTs) have demonstrated satisfactory performance at DC blocking voltages as high as 6.5 kV, designers can exploit the switching advantages of transistor technology in traction and industrial inverters while also optimising the DC link voltage for maximum power conversion efficiency. |
| Databáze: | OpenAIRE |
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