Intrinsic and oxygen-related deep level defects in In0.5(AlxGa1−x)0.5P grown by metal-organic vapor phase epitaxy

Autor:	M. J. Peanasky, Jeffrey G. Cederberg, S. A. Stockman, B. Bieg, J.-W. Huang, Thomas F. Kuech
Rok vydání:	1998
Předmět:	Photoluminescence Deep-level transient spectroscopy Band gap Chemistry Inorganic chemistry Analytical chemistry Condensed Matter Physics Epitaxy Crystallographic defect Inorganic Chemistry Impurity Materials Chemistry Metalorganic vapour phase epitaxy Luminescence
Zdroj:	Journal of Crystal Growth. 195:63-68
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)00677-0
Popis:	Oxygen-related defects in An-containing semiconductors can degrade luminescence efficiency and reduce free carrier lifetime affecting the performance of light emitting devices. We have used the oxygen-doping source, diethylaluminum ethoxide, (C 2 H 5 ) 2 AlOC 2 H 5 , to intentionally incorporate oxygen-related defects during growth of In 0.5 (Al x Ga 1 -x ) 0.5 P by metal-organic vapor phase epitaxy (MOVPE). Our investigations have identified several defects which are present in nonintentionally oxygen-doped n-type In 0.5 (Al x Ga 1-x ) 0.5 P as well as those due to oxygen. Oxygen introduces defect states near the middle of the band gap. Deep level transient spectroscopy and photoluminescence data obtained over the range of composition 0 < x < 1, are presented illustrating the trends in defect structure with alloy composition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::12ac1c965be9ff2ce4f333490be0876a https://doi.org/10.1016/s0022-0248(98)00677-0 Zobrazit plný text záznamu Full Text from ScienceDirect